Study of indium nitride and indium oxynitride band gaps

The optical band gap of indium oxynitride (InNO) and indium nitride (InN) deposited by magnetron reactive sputtering was studied. InNO has multi-functionality in electrical and photonic applications, transparency in the visible range, a wide band gap, high resistivity and a low leakage current. The pressure during deposition was kept constant at 1.33 Pa and the RF power (13.56 MHz) constant at 250 W. Silicon wafer was used as the substrate. The thin films were analysed by UV-Vis-NIR reflectance, photoluminescence and the Hall effect. The band gap was obtained from Tauc analysis of the reflectance spectra and photoluminescence. The band gap was 2.48 eV for InNO and 1.52 eV for InN. The relative quantities obtained from RBS spectra analysis in the InNO sample were 48% O, 12% N, 40% In, and in the InN sample were 8% O, 65% N, 27% In.