Feasibility of repairing full-thickness skin defects by iPSC-derived epithelial stem cells seeded on a human acellular amniotic membrane
Induced pluripotent stem cells (iPSCs) can generate epithelial stem cells (EpSCs) as seed cells for skin substitutes to repair skin defects. Here, we investigated the effects of a human acellular amniotic membrane (hAAM) combined with iPSC-derived CD200 /ITGA6 EpSCs as a skin substitute on repairing...
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Veröffentlicht in: | Stem cell research & therapy 2019-05, Vol.10 (1), p.155-155, Article 155 |
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Sprache: | eng |
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Zusammenfassung: | Induced pluripotent stem cells (iPSCs) can generate epithelial stem cells (EpSCs) as seed cells for skin substitutes to repair skin defects. Here, we investigated the effects of a human acellular amniotic membrane (hAAM) combined with iPSC-derived CD200
/ITGA6
EpSCs as a skin substitute on repairing skin defects in nude mice.
Human urinary cells isolated from a healthy donor were reprogrammed into iPSCs and then induced into CD200
/ITGA6
epithelial stem cells. Immunocytochemistry and RT-PCR were used to examine the characteristics of the induced epithelial stem cells. iPSC-derived EpSCs were cultured on a hAAM, and cytocompatibility of the composite was analyzed by CCK8 assays and scanning electron microscopy. Then, hAAMs combined with iPSC-derived EpSCs were transplanted onto skin defects of mice. The effects of this composite on skin repair were evaluated by immunohistochemistry.
The results showed that CD200
/ITGA6
epithelial stem cells induced from iPSCs displayed the phenotypes of hair follicle stem cells. After seeding on the hAAM, iPSC-derived epithelial stem cells had the ability to proliferate. After transplantation, CD200
/ITGA6
epithelial stem cells on the hAAM promoted the construction of hair follicles and interfollicular epidermis.
These results indicated that transplantation of a hAAM combined with iPS-derived EpSCs is feasible to reconstruct skin and skin appendages, and may be a substantial reference for iPSC-based therapy for skin defects. |
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ISSN: | 1757-6512 1757-6512 |
DOI: | 10.1186/s13287-019-1234-9 |