Theoretical and simulation study of pressure and temperature effect on the electronic states induced by the presence of a material defect in ZnO/ZnMgO MQWs

This work deals with a theoretical study of the effect of pressure and temperature on the electronic states induced by the presence of a material defect in ZnO/Zn1-XMgxO Multi-Quantum wells. To determine the transmission coefficient of our structure, we use a mathematical language very well known for composite materials that of the response theory, also called the green function. We demonstrate that the insertion of a material defect in the middle of the MQWs allows our systems to be like symmetrical systems and amplifies the electronic transmission of the defect state. Moreover, we found that the hydrostatic pressure increase induces a noticeable shift of the electronic state towards the lower energies due to the increase of the effective mass. This behavior will be reversed for the increase in the temperature. Our results were validated and compared with those of the literature. The change of position of the defect state allows us to use this structure as a regulable pressure and temperature sensor.