Estimation of power dissipation of a 4H-SiC Schottky barrier diode with a linearly graded doping profile in the drift region

Estimation of power dissipation of a 4H-SiC Schottky barrier diode with a linearly graded doping profile in the drift region

The aim of this paper is to establish the importance of a linearly graded profile in the drift region of a 4H-SiC Schottky barrier diode (SBD). The power dissipation of the device is found to be considerably lower at any given current density as compared to its value obtained for a uniformly doped d...

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Veröffentlicht in:Maejo international journal of science and technology 2009-09, Vol.3 (3), p.352-365
1. Verfasser: Rajneesh Talwar
Format: Artikel
Sprache:eng
Schlagworte:
4H-SiC
breakdown voltage
power dissipation
Schottky barrier diode
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Zusammenfassung:The aim of this paper is to establish the importance of a linearly graded profile in the drift region of a 4H-SiC Schottky barrier diode (SBD). The power dissipation of the device is found to be considerably lower at any given current density as compared to its value obtained for a uniformly doped drift region. The corresponding values of breakdown voltages obtained are similar to those obtained with uniformly doped wafers of 4H-SiC.
ISSN:1905-7873
1905-7873