Metal chalcogenide electron extraction layers for nip-type tin-based perovskite solar cells

Tin-based perovskite solar cells have garnered attention for their biocompatibility, narrow bandgap, and long thermal carrier lifetime. However, nip -type tin-based perovskite solar cells have underperformed largely due to the indiscriminate use of metal oxide electron transport layers originally designed for nip -type lead-based perovskite solar cells. Here, we reveal that this underperformance is caused by oxygen vacancies and deeper energy levels in metal oxide. To address these issues, we propose a metal chalcogenide electron transport layer, specifically Sn(S 0.92 Se 0.08 ) 2 , which circumvents the oxygen molecules desorption and impedes the Sn 2+ oxidation. As a result, tin-based perovskite solar cells with Sn(S 0.92 Se 0.08 ) 2 demonstrate a V OC increase from 0.48 – 0.73 V and a power conversion efficiency boost from 6.98 – 11.78%. Additionally, these cells exhibit improved stability, retaining over 95% of their initial efficiency after 1632 h. Our findings showcase metal chalcogenides as promising candidates for future nip -type tin-based perovskite solar cell applications. nip-Type tin-based perovskite solar cells have underperformed largely due to the metal oxide electron transport layers originally designed for lead-based devices. Here, authors employ metal chalcogenide as the electron transport layer, achieving enhanced efficiency up to 11.78% for stable devices.