Asynchronous delta-sigma modulator in 28 nm FDSOI technology

Asynchronous delta-sigma modulator in 28 nm FDSOI technology

A novel solution of the first-order asynchronous delta–sigma modulator (ADSM) is proposed. The circuit is designed for the commercial temperature range (0 °C to 70 °C) in a 28 nm fully depleted silicon on insulator (FD-SOI) technology from STMicroelectronics. This technology allows designing new sub...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Engineering science and technology, an international journal an international journal, 2024-09, Vol.57, p.101821, Article 101821
Hauptverfasser: Kledrowetz, Vilem, Fujcik, Lukas, Prokop, Roman, Haze, Jiri
Format: Artikel
Sprache:eng
Schlagworte:
Asynchronous delta-sigma modulator (ADSM)
Hysteresis comparator
Limit cycle frequency
Transconductor
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A novel solution of the first-order asynchronous delta–sigma modulator (ADSM) is proposed. The circuit is designed for the commercial temperature range (0 °C to 70 °C) in a 28 nm fully depleted silicon on insulator (FD-SOI) technology from STMicroelectronics. This technology allows designing new subcircuit topologies, resulting in an ADSM that offers a 64.2 dB signal-to-noise and distortion ratio (SNDR) corresponding to a 10.37-bit resolution in the signal bandwidth of 10 kHz. The ADSM consumes 4.1 μW at a power supply of 1 V, and the obtained power efficiency is 0.15 pJ/conversion. The ADSM occupies an area of only 0.0042 mm2.
ISSN:2215-0986
2215-0986
DOI:10.1016/j.jestch.2024.101821