Luminescence Centers in Thin Films of ZnGa2O4

Photoexcitation spectra and luminescence of thin films of ZnGa2O4 under photo-, cathode and X-ray excitation were investigated. Luminescence spectra were factorized on ultimate constituents using Alentsev-Fock method. Emission bands with maximums at 3.35, 2.85, 2.50 and 2.38 eV were referred to the luminescence at the expense of electronic transitions between 4Т2, 4Т1, 2Е and 4А2 terms in octahedral complexes (GaO6)9–. It was proposed an energy level diagram with corresponding electronic transitions in such structure. Luminescence band with maximum at 1.75 eV is attributed to oxygen vacancies.