Structure determination of a low-crystallinity covalent organic framework by three-dimensional electron diffraction
Covalent organic frameworks (COFs) have been attracting intense research due to their permanent porosity, designable architecture, and high stability. However, COFs are challenging to crystallize and their synthesis often results in tiny crystal sizes and low crystallinities, which hinders an unambi...
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Veröffentlicht in: | Communications chemistry 2023-06, Vol.6 (1), p.116-116, Article 116 |
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Sprache: | eng |
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Zusammenfassung: | Covalent organic frameworks (COFs) have been attracting intense research due to their permanent porosity, designable architecture, and high stability. However, COFs are challenging to crystallize and their synthesis often results in tiny crystal sizes and low crystallinities, which hinders an unambiguous structure determination. Herein, we demonstrate that the structure of low-crystallinity COF Py-1P nanocrystals can be solved by coupling three-dimensional electron diffraction (3DED) with simulated annealing (SA). The resulting model is comparable to that obtained from high-crystallinity samples by dual-space method. Moreover, for low-resolution 3DED data, the model obtained by SA shows a better framework than those provided by classic direct method, dual-space method, and charge flipping. We further simulate data with different resolutions to understand the reliability of SA under different crystal quality conditions. The successful determination of Py-1P structure by SA compared to other methods provides new knowledge for using 3DED to analyze low-crystallinity and nanosized materials.
Covalent organic frameworks have demonstrated promise for a wide variety of applications, but their synthesis often results in materials with low crystallinity that are challenging to characterize. Here, coupling three dimensional electron diffraction with simulated annealing is shown to enable the structural determination of a low crystallinity pyrene-containing covalent organic framework. |
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ISSN: | 2399-3669 2399-3669 |
DOI: | 10.1038/s42004-023-00915-4 |