Topological flat bands and correlated states in twisted monolayer-bilayer graphene
Monolayer graphene placed with a twist on top of AB-stacked bilayer graphene hosts topological flat bands in a wide range of twist angles. The dispersion of these bands and gaps between them can be efficiently controlled by a perpendicular electric field, which induces topological transitions accomp...
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Veröffentlicht in: | Physical review research 2020-07, Vol.2 (3), p.033150, Article 033150 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Monolayer graphene placed with a twist on top of AB-stacked bilayer graphene hosts topological flat bands in a wide range of twist angles. The dispersion of these bands and gaps between them can be efficiently controlled by a perpendicular electric field, which induces topological transitions accompanied by changes of the Chern numbers. In the regime where the applied electric field induces gaps between the flat bands, we find a relatively uniform distribution of the Berry curvature. Consequently, interaction-induced valley- and/or spin-polarized states at integer filling factors are energetically favorable. In particular, we predict a quantum anomalous Hall state at filling factors ν=1,3 for a range of twist angles 1^{∘} |
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ISSN: | 2643-1564 2643-1564 |
DOI: | 10.1103/PhysRevResearch.2.033150 |