Phtometry measurements using spectroscopic ellipsometer of PAAO containing samples in air and water (AoI 45 deg., 60 deg., varying polarizer and analyser angles)

The file contains raw intensity data measured in reflection mode for various material combinations: porous anodized aluminium oxide (PAAO), gold nanoparticles (Au NPs), diamond-like carbon with silver nanoparticles composite (DLC:Ag), quartz, and silicon. List of investigated samples: Sample name Sample description AJ1 Aluminium substrate, ~241 nm thickness PAAO (anodized in 0.3 mol/L oxalic acid at 40 V for 3 min 16 s), 60 nm diameter Au NPs (dip-coated at a speed of 1 μm/s) AJ2 Aluminium substrate, ~259 nm thickness PAAO (anodized in 0.3 mol/L oxalic acid at 40 V for 3 min 37 s), 60 nm diameter Au NPs (dip-coated at a speed of 1 μm/s) AJ3 Aluminium substrate, ~293 nm thickness PAAO (anodized in 0.3 mol/L oxalic acid at 40 V for 4 min 8 s), 60 nm diameter Au NPs (dip-coated at a speed of 1 μm/s) AJ4 Aluminium substrate, ~317 nm thickness PAAO (anodized in 0.3 mol/L oxalic acid at 40 V for 4 min 30 s), 60 nm diameter Au NPs (dip-coated at a speed of 1 μm/s) AJ5 Aluminium substrate, ~345 nm thickness PAAO (anodized in 0.3 mol/L oxalic acid at 40 V for 4 min 57 s), 60 nm diameter Au NPs (dip-coated at a speed of 1 μm/s) AJ6 Aluminium substrate, ~276 nm thickness PAAO (anodized in 0.3 mol/L oxalic acid at 40 V for 3 min 42 s), ~55 nm thickness, 20 V.% Ag concentration DLC:Ag (magnetron sputtered using silver target, 80 sccm argon gas flow, 5.4 sccm C2H2 gas flow, 405 V voltage, 0.09-0.10 A current, 7·10-3 mbar work pressure, 2 minutes 32 seconds process duration) AJ7 Aluminium substrate, ~316 nm thickness PAAO (anodized in 0.3 mol/L oxalic acid at 40 V for 4 min 25 s), ~55 nm thickness, 20 V.% Ag concentration DLC:Ag (magnetron sputtered using silver target, 80 sccm argon gas flow, 5.4 sccm C2H2 gas flow, 405 V voltage, 0.09-0.10 A current, 7·10-3 mbar work pressure, 2 minutes 32 seconds process duration) AJ8 Aluminium substrate, ~345 nm thickness PAAO (anodized in 0.3 mol/L oxalic acid at 40 V for 5 min 4 s), ~55 nm thickness, 20 V.% Ag concentration DLC:Ag (magnetron sputtered using silver target, 80 sccm argon gas flow, 5.4 sccm C2H2 gas flow, 405 V voltage, 0.09-0.10 A current, 7·10-3 mbar work pressure, 2 minutes 32 seconds process duration) Q140 Quartz substrate, ~55 nm thickness, 20 V.% Ag concentration DLC:Ag (magnetron sputtered using silver target, 80 sccm argon gas flow, 5.4 sccm C2H2 gas flow, 405 V voltage, 0.09-0.10 A current, 7·10-3 mbar work pressure, 2 minutes 32 seconds process duration) Si140 Silicon substrate, ~55 nm thickness, 20 V.% Ag c