6T and 8T FinFET SRAM Power Gating Data

6T and 8T FinFET SRAM Power Gating Data

Graphs and underlying data for 6T and 8T FinFET SRAM schemes using power gating. These data and graphs accompany "Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells with Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating" submitted to IEEE Transactions on Circuits an...

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Bibliographische Detailangaben
1. Verfasser: Turi, Michael A.
Format: Dataset
Sprache:eng
Schlagworte:
FinFET
Near-Threshold Operation
Power Gating
T SRAM
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Beschreibung
Zusammenfassung:Graphs and underlying data for 6T and 8T FinFET SRAM schemes using power gating. These data and graphs accompany "Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells with Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating" submitted to IEEE Transactions on Circuits and Systems II: Express Briefs on October 1, 2018.
DOI:10.5281/zenodo.2605725