Data for: Carbon nanoscroll based memory cell

File "Figure2.opj" provides plots ROff(dOff) for critical sizes of memory cell dOffmin(nm) = 0.4 + L/2π - ROff (upper line) and dOffmax(nm) = 0.4 + 2L/π - ROff (lower line). File "Figure3.opj" provides plots Usw(ROff) taken from XLS file "Usw(Roff).xls" and plots Usw(wo...

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Hauptverfasser: Siahlo, Andrei I., Vyrko, Sergey A., Popov, Andrei, Poklonski, Nikolai A., Lozovik, Yurii
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Sprache:eng
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Zusammenfassung:File "Figure2.opj" provides plots ROff(dOff) for critical sizes of memory cell dOffmin(nm) = 0.4 + L/2π - ROff (upper line) and dOffmax(nm) = 0.4 + 2L/π - ROff (lower line). File "Figure3.opj" provides plots Usw(ROff) taken from XLS file "Usw(Roff).xls" and plots Usw(wov/w) (see description for three electrode device code below). File "Usw(Roff).xls" arranges dependences Usw(ROff) from dependences Usw(doff) calculated by Mathematica code given in ZIP archive "Usw(doff) for Roff1-30nm.zip" for two electrode device. File "Usw(doff) for Roff1-30nm and wov2w.zip" contains Mathematica code for three electrode memory cell using user defined ratio wov/w < 1 (ratio wov/w = 1 corresponds to two electrode device).
DOI:10.17632/sm9xmywk58