Data for Strain-resilient field-effect transistors based on wrinkled graphene/MoS2 heterostructures

Data for Strain-resilient field-effect transistors based on wrinkled graphene/MoS2 heterostructures

This data set includes all of data related to strain-resilient FETs based on 2D heterostructures including optical images of FETs, Raman characteristics data, Transport measurement data, and AFM topography data.

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Bibliographische Detailangaben
Hauptverfasser: Kim, Hyunchul, Zhao, Helin, van der Zande, Arend
Format: Dataset
Sprache:eng
Schlagworte:
D materials
Stretchable electronics
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Beschreibung
Zusammenfassung:This data set includes all of data related to strain-resilient FETs based on 2D heterostructures including optical images of FETs, Raman characteristics data, Transport measurement data, and AFM topography data.
DOI:10.13012/b2idb-6434046_v1