Improvement of driver to gate coupling circuits for SiC MOSFETS

Improvement of driver to gate coupling circuits for SiC MOSFETS

This work presents a study of the influence of different gate driver circuits on the switching behavior of SiC MOSFET devices used in a buck converter. The paper is based on several tests performed to determine the switching times and switching losses, using different reverse bias V GS voltage level...

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Bibliographische Detailangaben
Hauptverfasser: Balcells, J., Mon, J., Lamich, M., Laguna, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits elèctrics
Conducted EMI
Convertidors de corrent elèctric
Coupling circuits
DC-DC converters
Driver circuits
Electric current converters
Electric currents
Electromagnetic interference
Enginyeria electrònica
Logic gates
MOSFET
Power Losses
SiC MOSFET
Silicon carbide
Time factors
Àrees temàtiques de la UPC
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Beschreibung
Zusammenfassung:This work presents a study of the influence of different gate driver circuits on the switching behavior of SiC MOSFET devices used in a buck converter. The paper is based on several tests performed to determine the switching times and switching losses, using different reverse bias V GS voltage levels and different passive RCD (Resistance Capacitor Diode) circuits to interface the driver to the SiC MOSFET gate. The study reveals that the gate bias and the different coupling circuits have little influence on response time, nevertheless choosing the right combination of reverse bias and coupling capacitor may reduce the switching losses.
ISSN:2163-5137
DOI:10.1109/ISIE.2014.6864667