Sub-Bandgap External Quantum Efficiency in Ti Implanted Si Heterojunction with Intrinsic Thin Layer Cells
In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at photon energies well below the Si...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2013-12, Vol.52 (12), p.122302-122302-5 |
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| container_end_page | 122302-5 |
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| container_issue | 12 |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 52 |
| creator | Silvestre, Santiago Boronat, Alfredo Colina, Mónica Castañer, Luis Olea, Javier Pastor, David Prado, Alvaro del Mártil, Ignacio González-Díaz, Germán Luque, Antonio Antolín, Elisa Hernández, Estela Ramiro, Iñigo Artacho, Irene López, Esther Martí, Antonio |
| description | In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage. |
| doi_str_mv | 10.7567/JJAP.52.122302 |
| format | Article |
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We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage.</description><subject>Cèl·lules solars</subject><subject>Electric potential</subject><subject>Energia solar fotovoltaica</subject><subject>Energies</subject><subject>Heterojunctions</subject><subject>Photocurrent</subject><subject>Photoelectric effect</subject><subject>Photons</subject><subject>Silicon</subject><subject>Solar cells</subject><subject>Thin films</subject><subject>Titanium</subject><subject>Voltage</subject><subject>Àrees temàtiques de la UPC</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>XX2</sourceid><recordid>eNqFkcFLwzAUxoMoOKdXzzmK0Jm8NG1znGO6yUBl8xzSNHUZXVqTFt1_b0cHHj08Ho_3_T4e70PolpJJypP04eVl-jbhMKEAjMAZGlEWp1FMEn6ORoQAjWIBcImuQtj1Y8JjOkJ23eXRo3LFp2rw_Kc13qkKv3fKtd0ez8vSamucPmDr8Mbi5b6p-pUp8Nrihenl9a5zurW1w9-23eKla711wWq82fbISh2MxzNTVeEaXZSqCubm1Mfo42m-mS2i1evzcjZdRZqJuI0SkxENTGhRGJJTTnKWgYAUEmZSwfKUAWQ85kIzrQktS1FQmhRgtGCMUcXGiA6-OnRaeqON16qVtbJ_w7GApCABgGRZz9wNTOPrr86EVu5t0P3Vypm6C5ImGU-T_rFH6eRk7-sQvCll4-1e-YOkRB5zkMccJAc55NAD9wNgG9X8J_4FADGG9g</recordid><startdate>20131201</startdate><enddate>20131201</enddate><creator>Silvestre, Santiago</creator><creator>Boronat, Alfredo</creator><creator>Colina, Mónica</creator><creator>Castañer, Luis</creator><creator>Olea, Javier</creator><creator>Pastor, David</creator><creator>Prado, Alvaro del</creator><creator>Mártil, Ignacio</creator><creator>González-Díaz, Germán</creator><creator>Luque, Antonio</creator><creator>Antolín, Elisa</creator><creator>Hernández, Estela</creator><creator>Ramiro, Iñigo</creator><creator>Artacho, Irene</creator><creator>López, Esther</creator><creator>Martí, Antonio</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope><scope>XX2</scope></search><sort><creationdate>20131201</creationdate><title>Sub-Bandgap External Quantum Efficiency in Ti Implanted Si Heterojunction with Intrinsic Thin Layer Cells</title><author>Silvestre, Santiago ; 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The cells exhibit external circuit photocurrent at photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.52.122302</doi><oa>free_for_read</oa></addata></record> |
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| source | IOP Publishing Journals; Recercat; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Cèl·lules solars Electric potential Energia solar fotovoltaica Energies Heterojunctions Photocurrent Photoelectric effect Photons Silicon Solar cells Thin films Titanium Voltage Àrees temàtiques de la UPC |
| title | Sub-Bandgap External Quantum Efficiency in Ti Implanted Si Heterojunction with Intrinsic Thin Layer Cells |
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