Improved performance of a GaMnAs-based vertical spin electric double-layer transistor

A spin metal-oxide-semiconductor field-effect transistor (MOSFET) is a promising spintronics device for future low-power electronics. In this paper, we demonstrate the successful improvement of the performance of a spin-MOSFET-type device, a ferromagnetic-semiconductor GaMnAs-based vertical spin electric double-layer transistor (EDLT); the magnetoresistance ratio reaches 37%, which is 7 times larger than those obtained in previous studies. Furthermore, we find that the magnetic anisotropy of our device is modulated by changing the gate voltage. Our results open up the possibility of realizing novel functional devices, in which both current and magnetic anisotropy can be controlled by the gate electric field.