Residual stress investigation of via-last through-silicon via by polarized Raman spectroscopy measurement and finite element simulation

The residual stresses induced around through-silicon vias (TSVs) by a fabrication process is one of the major concerns of reliability. We proposed a methodology to investigate the residual stress in a via-last TSV. Firstly, radial and axial thermal stresses were measured by polarized Raman spectroscopy. The agreement between the simulated stress level and measured results validated the detail simulation model. Furthermore, the validated simulation model was adopted to the study of residual stress by element death/birth methods. The residual stress at room temperature concentrates at passivation layers owing to the high fabrication process temperatures of 420 °C for SiN film and 350 °C for SiO2 films. For a Si substrate, a high-level stress was observed near potential device locations, which requires attention to address reliability concerns in stress-sensitive devices. This methodology of residual stress analysis can be adopted to investigate the residual stress in other devices.