Preparation of TiN films by reactive high-power pulsed sputtering Penning discharges

Titanium nitride (TiN) films are prepared by reactive high-power pulsed sputtering Penning discharges at a total pressure of 0.7 Pa and an average power of 60 W, where the nitrogen fraction is varied up to 15%. The peak value of the instantaneous power ranges between 3 and 14 kW, and the peak power...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2018-06, Vol.57 (6S2), p.6
Hauptverfasser: Kimura, Takashi, Yoshida, Ryo, Mishima, Toshihiko, Azuma, Kingo, Nakao, Setsuo
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 6S2
container_start_page 6
container_title Japanese Journal of Applied Physics
container_volume 57
creator Kimura, Takashi
Yoshida, Ryo
Mishima, Toshihiko
Azuma, Kingo
Nakao, Setsuo
description Titanium nitride (TiN) films are prepared by reactive high-power pulsed sputtering Penning discharges at a total pressure of 0.7 Pa and an average power of 60 W, where the nitrogen fraction is varied up to 15%. The peak value of the instantaneous power ranges between 3 and 14 kW, and the peak power density ranges between 0.3 and 1.2 kW cm−2. The hardness of TiN films is higher than 22 GPa at the nitrogen fractions lower than 10% and it reaches 31 GPa at a nitrogen fraction of 5%. The X-ray diffraction peak of TiN(111) texture is observed for all prepared films, showing the grain size of about 10 nm. In X-ray photoelectron spectroscopy, oxygen is mainly bonded to titanium, but the intensity of the TiN bond is dominant in the entire Ti 2p spectrum. The intensity ratio of N 1s to Ti 2p ranges between 0.85 and 0.95.
doi_str_mv 10.7567/JJAP.57.06JE02
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_7567_JJAP_57_06JE02</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2166999656</sourcerecordid><originalsourceid>FETCH-LOGICAL-c368t-3799788db21c8207c4ee706705cdff87c72797b60742998b25387a3de519bf353</originalsourceid><addsrcrecordid>eNp1kM1LwzAYxoMoOKdXzwFvQms-mrzNcYz5MUR3mOeQpumWsbU1aZX993ZU8OTp4YXf87zwQ-iWkhSEhIflcrZKBaRELheEnaEJ5RkkGZHiHE0IYTTJFGOX6CrG3XBKkdEJWq-Ca00wnW9q3FR47d9w5feHiIsjDs7Yzn85vPWbbdI23y7gtt9HV-LY9l3ngq83eOXq-pSlj3ZrwsbFa3RRmQG7-c0p-nhcrOfPyev708t89ppYLvMu4aAU5HlZMGpzRsBmzgGRQIQtqyoHCwwUFJJAxpTKCyZ4DoaXTlBVVFzwKbobd9vQfPYudnrX9KEeXmpGpVRKSSEHKh0pG5oYg6t0G_zBhKOmRJ_M6ZM5LUCP5obC_VjwTfu3-A_8A1B9bc8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2166999656</pqid></control><display><type>article</type><title>Preparation of TiN films by reactive high-power pulsed sputtering Penning discharges</title><source>Institute of Physics Journals</source><creator>Kimura, Takashi ; Yoshida, Ryo ; Mishima, Toshihiko ; Azuma, Kingo ; Nakao, Setsuo</creator><creatorcontrib>Kimura, Takashi ; Yoshida, Ryo ; Mishima, Toshihiko ; Azuma, Kingo ; Nakao, Setsuo</creatorcontrib><description>Titanium nitride (TiN) films are prepared by reactive high-power pulsed sputtering Penning discharges at a total pressure of 0.7 Pa and an average power of 60 W, where the nitrogen fraction is varied up to 15%. The peak value of the instantaneous power ranges between 3 and 14 kW, and the peak power density ranges between 0.3 and 1.2 kW cm−2. The hardness of TiN films is higher than 22 GPa at the nitrogen fractions lower than 10% and it reaches 31 GPa at a nitrogen fraction of 5%. The X-ray diffraction peak of TiN(111) texture is observed for all prepared films, showing the grain size of about 10 nm. In X-ray photoelectron spectroscopy, oxygen is mainly bonded to titanium, but the intensity of the TiN bond is dominant in the entire Ti 2p spectrum. The intensity ratio of N 1s to Ti 2p ranges between 0.85 and 0.95.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.57.06JE02</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: The Japan Society of Applied Physics</publisher><subject>Discharge ; Nitrogen ; Photoelectrons ; Sputtering ; Titanium nitride ; X-ray diffraction</subject><ispartof>Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S2), p.6</ispartof><rights>2018 The Japan Society of Applied Physics</rights><rights>Copyright Japanese Journal of Applied Physics Jun 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c368t-3799788db21c8207c4ee706705cdff87c72797b60742998b25387a3de519bf353</citedby><cites>FETCH-LOGICAL-c368t-3799788db21c8207c4ee706705cdff87c72797b60742998b25387a3de519bf353</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.57.06JE02/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Kimura, Takashi</creatorcontrib><creatorcontrib>Yoshida, Ryo</creatorcontrib><creatorcontrib>Mishima, Toshihiko</creatorcontrib><creatorcontrib>Azuma, Kingo</creatorcontrib><creatorcontrib>Nakao, Setsuo</creatorcontrib><title>Preparation of TiN films by reactive high-power pulsed sputtering Penning discharges</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>Titanium nitride (TiN) films are prepared by reactive high-power pulsed sputtering Penning discharges at a total pressure of 0.7 Pa and an average power of 60 W, where the nitrogen fraction is varied up to 15%. The peak value of the instantaneous power ranges between 3 and 14 kW, and the peak power density ranges between 0.3 and 1.2 kW cm−2. The hardness of TiN films is higher than 22 GPa at the nitrogen fractions lower than 10% and it reaches 31 GPa at a nitrogen fraction of 5%. The X-ray diffraction peak of TiN(111) texture is observed for all prepared films, showing the grain size of about 10 nm. In X-ray photoelectron spectroscopy, oxygen is mainly bonded to titanium, but the intensity of the TiN bond is dominant in the entire Ti 2p spectrum. The intensity ratio of N 1s to Ti 2p ranges between 0.85 and 0.95.</description><subject>Discharge</subject><subject>Nitrogen</subject><subject>Photoelectrons</subject><subject>Sputtering</subject><subject>Titanium nitride</subject><subject>X-ray diffraction</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kM1LwzAYxoMoOKdXzwFvQms-mrzNcYz5MUR3mOeQpumWsbU1aZX993ZU8OTp4YXf87zwQ-iWkhSEhIflcrZKBaRELheEnaEJ5RkkGZHiHE0IYTTJFGOX6CrG3XBKkdEJWq-Ca00wnW9q3FR47d9w5feHiIsjDs7Yzn85vPWbbdI23y7gtt9HV-LY9l3ngq83eOXq-pSlj3ZrwsbFa3RRmQG7-c0p-nhcrOfPyev708t89ppYLvMu4aAU5HlZMGpzRsBmzgGRQIQtqyoHCwwUFJJAxpTKCyZ4DoaXTlBVVFzwKbobd9vQfPYudnrX9KEeXmpGpVRKSSEHKh0pG5oYg6t0G_zBhKOmRJ_M6ZM5LUCP5obC_VjwTfu3-A_8A1B9bc8</recordid><startdate>20180601</startdate><enddate>20180601</enddate><creator>Kimura, Takashi</creator><creator>Yoshida, Ryo</creator><creator>Mishima, Toshihiko</creator><creator>Azuma, Kingo</creator><creator>Nakao, Setsuo</creator><general>The Japan Society of Applied Physics</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20180601</creationdate><title>Preparation of TiN films by reactive high-power pulsed sputtering Penning discharges</title><author>Kimura, Takashi ; Yoshida, Ryo ; Mishima, Toshihiko ; Azuma, Kingo ; Nakao, Setsuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c368t-3799788db21c8207c4ee706705cdff87c72797b60742998b25387a3de519bf353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Discharge</topic><topic>Nitrogen</topic><topic>Photoelectrons</topic><topic>Sputtering</topic><topic>Titanium nitride</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kimura, Takashi</creatorcontrib><creatorcontrib>Yoshida, Ryo</creatorcontrib><creatorcontrib>Mishima, Toshihiko</creatorcontrib><creatorcontrib>Azuma, Kingo</creatorcontrib><creatorcontrib>Nakao, Setsuo</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kimura, Takashi</au><au>Yoshida, Ryo</au><au>Mishima, Toshihiko</au><au>Azuma, Kingo</au><au>Nakao, Setsuo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation of TiN films by reactive high-power pulsed sputtering Penning discharges</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2018-06-01</date><risdate>2018</risdate><volume>57</volume><issue>6S2</issue><spage>6</spage><pages>6-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Titanium nitride (TiN) films are prepared by reactive high-power pulsed sputtering Penning discharges at a total pressure of 0.7 Pa and an average power of 60 W, where the nitrogen fraction is varied up to 15%. The peak value of the instantaneous power ranges between 3 and 14 kW, and the peak power density ranges between 0.3 and 1.2 kW cm−2. The hardness of TiN films is higher than 22 GPa at the nitrogen fractions lower than 10% and it reaches 31 GPa at a nitrogen fraction of 5%. The X-ray diffraction peak of TiN(111) texture is observed for all prepared films, showing the grain size of about 10 nm. In X-ray photoelectron spectroscopy, oxygen is mainly bonded to titanium, but the intensity of the TiN bond is dominant in the entire Ti 2p spectrum. The intensity ratio of N 1s to Ti 2p ranges between 0.85 and 0.95.</abstract><cop>Tokyo</cop><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.57.06JE02</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S2), p.6
issn 0021-4922
1347-4065
language eng
recordid cdi_crossref_primary_10_7567_JJAP_57_06JE02
source Institute of Physics Journals
subjects Discharge
Nitrogen
Photoelectrons
Sputtering
Titanium nitride
X-ray diffraction
title Preparation of TiN films by reactive high-power pulsed sputtering Penning discharges
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T18%3A45%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Preparation%20of%20TiN%20films%20by%20reactive%20high-power%20pulsed%20sputtering%20Penning%20discharges&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Kimura,%20Takashi&rft.date=2018-06-01&rft.volume=57&rft.issue=6S2&rft.spage=6&rft.pages=6-&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPB6&rft_id=info:doi/10.7567/JJAP.57.06JE02&rft_dat=%3Cproquest_cross%3E2166999656%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2166999656&rft_id=info:pmid/&rfr_iscdi=true