Preparation of TiN films by reactive high-power pulsed sputtering Penning discharges

Titanium nitride (TiN) films are prepared by reactive high-power pulsed sputtering Penning discharges at a total pressure of 0.7 Pa and an average power of 60 W, where the nitrogen fraction is varied up to 15%. The peak value of the instantaneous power ranges between 3 and 14 kW, and the peak power...

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Veröffentlicht in:Japanese Journal of Applied Physics 2018-06, Vol.57 (6S2), p.6
Hauptverfasser: Kimura, Takashi, Yoshida, Ryo, Mishima, Toshihiko, Azuma, Kingo, Nakao, Setsuo
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Sprache:eng
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Zusammenfassung:Titanium nitride (TiN) films are prepared by reactive high-power pulsed sputtering Penning discharges at a total pressure of 0.7 Pa and an average power of 60 W, where the nitrogen fraction is varied up to 15%. The peak value of the instantaneous power ranges between 3 and 14 kW, and the peak power density ranges between 0.3 and 1.2 kW cm−2. The hardness of TiN films is higher than 22 GPa at the nitrogen fractions lower than 10% and it reaches 31 GPa at a nitrogen fraction of 5%. The X-ray diffraction peak of TiN(111) texture is observed for all prepared films, showing the grain size of about 10 nm. In X-ray photoelectron spectroscopy, oxygen is mainly bonded to titanium, but the intensity of the TiN bond is dominant in the entire Ti 2p spectrum. The intensity ratio of N 1s to Ti 2p ranges between 0.85 and 0.95.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.06JE02