Evaluation of stress stabilities in amorphous In-Ga-Zn-O thin-film transistors: Effect of passivation with Si-based resin

Fabrication process conditions of a passivation (PV) layer correlated with stress stabilities of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). In etch-stop layer (ESL)-TFTs, by inserting a Si-based resin between SiNx and SiOx PV layers, the peak intensity in the photoinduced transient...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2018-02, Vol.57 (2S2), p.2
Hauptverfasser:	Ochi, Mototaka, Hino, Aya, Goto, Hiroshi, Hayashi, Kazushi, Fujii, Mami N., Uraoka, Yukiharu, Kugimiya, Toshihiro
Format:	Artikel
Sprache:	eng
Schlagworte:	Defects Hydrogen Hydrogen atoms Indium gallium zinc oxide Passivity Semiconductor devices Stresses Thin film transistors Transistors
Online-Zugang:	Volltext
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