Surface activated room-temperature bonding in Ar gas ambient for MEMS encapsulation

Surface activated room-temperature bonding of Si and sapphire wafers in high-purity inert gas ambient was examined. Although surface activated bonding has been mainly performed in high vacuum, Si and sapphire wafers were successfully bonded in Ar gas ambient up to 90 kPa, which is almost atmospheric...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2018-02, Vol.57 (2S1), p.2
Hauptverfasser:	Takagi, Hideki, Kurashima, Yuichi, Takamizawa, Akifumi, Ikegami, Takeshi, Yanagimachi, Shinya
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic clocks Bonding strength Chemical bonds Electronic packaging High vacuum Microelectromechanical systems Rare gases Room temperature Sapphire Switches Wafers
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