Surface activated room-temperature bonding in Ar gas ambient for MEMS encapsulation

Surface activated room-temperature bonding of Si and sapphire wafers in high-purity inert gas ambient was examined. Although surface activated bonding has been mainly performed in high vacuum, Si and sapphire wafers were successfully bonded in Ar gas ambient up to 90 kPa, which is almost atmospheric...

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Veröffentlicht in:Japanese Journal of Applied Physics 2018-02, Vol.57 (2S1), p.2
Hauptverfasser: Takagi, Hideki, Kurashima, Yuichi, Takamizawa, Akifumi, Ikegami, Takeshi, Yanagimachi, Shinya
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Sprache:eng
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Zusammenfassung:Surface activated room-temperature bonding of Si and sapphire wafers in high-purity inert gas ambient was examined. Although surface activated bonding has been mainly performed in high vacuum, Si and sapphire wafers were successfully bonded in Ar gas ambient up to 90 kPa, which is almost atmospheric pressure. The dicing test proved that the bonding prepared in Ar gas ambient was strong enough for MEMS packaging, although the bonding strength was slightly decreased compared with that prepared in vacuum. Transmission electron microscope observation revealed that the bonding interface prepared in Ar gas ambient is almost the same as that prepared in vacuum. It means that Ar atoms in the bonding ambient do not hamper the interatomic bond formation at the bonding interface. Room-temperature bonding in gas ambient enables hermetic packaging of MEMS devices, such as inertia sensors, MEMS switches, and Cs vapor cells for MEMS atomic clocks at various pressures.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.02BA04