Effects of Ge substitution on thermoelectric properties of CrSi 2

Polycrystalline Cr(Si 1− x Ge x ) 2 samples were prepared using arc melting and spark plasma sintering methods. Single-phase Cr(Si 1− x Ge x ) 2 samples were obtained for the compositional range of 0 ≤ x ≤ 0.015 and the lattice parameters monotonically increased with x . In the range of single phase...

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Veröffentlicht in:Japanese Journal of Applied Physics 2016-11, Vol.55 (11), p.111801
Hauptverfasser: Nagai, Hiroki, Takamatsu, Tomohisa, Iijima, Yoshihiko, Hayashi, Kei, Miyazaki, Yuzuru
Format: Artikel
Sprache:eng
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