Effects of Ge substitution on thermoelectric properties of CrSi 2
Polycrystalline Cr(Si 1− x Ge x ) 2 samples were prepared using arc melting and spark plasma sintering methods. Single-phase Cr(Si 1− x Ge x ) 2 samples were obtained for the compositional range of 0 ≤ x ≤ 0.015 and the lattice parameters monotonically increased with x . In the range of single phase...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2016-11, Vol.55 (11), p.111801 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Nagai, Hiroki Takamatsu, Tomohisa Iijima, Yoshihiko Hayashi, Kei Miyazaki, Yuzuru |
| description | Polycrystalline Cr(Si
1−
x
Ge
x
)
2
samples were prepared using arc melting and spark plasma sintering methods. Single-phase Cr(Si
1−
x
Ge
x
)
2
samples were obtained for the compositional range of 0 ≤
x
≤ 0.015 and the lattice parameters monotonically increased with
x
. In the range of single phases, the electrical conductivity and Seebeck coefficient increased and decreased with increasing
x
, respectively. The partial substitution of Ge effectively reduced the thermal conductivity to ∼80%, which resulted in the increase in the
ZT
of Cr(Si
1−
x
Ge
x
)
2
samples from 0.16 (
x
= 0) to 0.25 (
x
= 0.015) at 600 K. From the results of first-principles calculation for transport properties, it can be concluded that the origin of the increase in electrical conductivity and the decrease in Seebeck coefficient of Ge-substituted samples is the decrease in carrier effective mass. |
| doi_str_mv | 10.7567/JJAP.55.111801 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_7567_JJAP_55_111801</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_7567_JJAP_55_111801</sourcerecordid><originalsourceid>FETCH-LOGICAL-c841-27804bfb43d375e909cc747e77019ae9f7f851fb3233f059907c29714dcdde1a3</originalsourceid><addsrcrecordid>eNotj11LwzAYhYMoWKe3XucPtObNR9NcljKnY6Dg7kObvsHIZkuSXfjv7Zxw4HDg4cBDyCOwSqtaP2237XulVAUADYMrUoCQupSsVtekYIxDKQ3nt-Qupa9l1kpCQdq19-hyopOnG6TpNKQc8imH6ZsuyZ8YjxMeFiQGR-c4zRhzwD--ix-B8nty4_tDwof_XpH983rfvZS7t81r1-5K10gouW6YHPwgxSi0QsOMc1pq1JqB6dF47RsFfhBcCM-UMUw7bjTI0Y0jQi9WpLrcujilFNHbOYZjH38sMHv2t2d_q5S9-ItfnxBNIQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effects of Ge substitution on thermoelectric properties of CrSi 2</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Nagai, Hiroki ; Takamatsu, Tomohisa ; Iijima, Yoshihiko ; Hayashi, Kei ; Miyazaki, Yuzuru</creator><creatorcontrib>Nagai, Hiroki ; Takamatsu, Tomohisa ; Iijima, Yoshihiko ; Hayashi, Kei ; Miyazaki, Yuzuru</creatorcontrib><description>Polycrystalline Cr(Si
1−
x
Ge
x
)
2
samples were prepared using arc melting and spark plasma sintering methods. Single-phase Cr(Si
1−
x
Ge
x
)
2
samples were obtained for the compositional range of 0 ≤
x
≤ 0.015 and the lattice parameters monotonically increased with
x
. In the range of single phases, the electrical conductivity and Seebeck coefficient increased and decreased with increasing
x
, respectively. The partial substitution of Ge effectively reduced the thermal conductivity to ∼80%, which resulted in the increase in the
ZT
of Cr(Si
1−
x
Ge
x
)
2
samples from 0.16 (
x
= 0) to 0.25 (
x
= 0.015) at 600 K. From the results of first-principles calculation for transport properties, it can be concluded that the origin of the increase in electrical conductivity and the decrease in Seebeck coefficient of Ge-substituted samples is the decrease in carrier effective mass.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.55.111801</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2016-11, Vol.55 (11), p.111801</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c841-27804bfb43d375e909cc747e77019ae9f7f851fb3233f059907c29714dcdde1a3</citedby><cites>FETCH-LOGICAL-c841-27804bfb43d375e909cc747e77019ae9f7f851fb3233f059907c29714dcdde1a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Nagai, Hiroki</creatorcontrib><creatorcontrib>Takamatsu, Tomohisa</creatorcontrib><creatorcontrib>Iijima, Yoshihiko</creatorcontrib><creatorcontrib>Hayashi, Kei</creatorcontrib><creatorcontrib>Miyazaki, Yuzuru</creatorcontrib><title>Effects of Ge substitution on thermoelectric properties of CrSi 2</title><title>Japanese Journal of Applied Physics</title><description>Polycrystalline Cr(Si
1−
x
Ge
x
)
2
samples were prepared using arc melting and spark plasma sintering methods. Single-phase Cr(Si
1−
x
Ge
x
)
2
samples were obtained for the compositional range of 0 ≤
x
≤ 0.015 and the lattice parameters monotonically increased with
x
. In the range of single phases, the electrical conductivity and Seebeck coefficient increased and decreased with increasing
x
, respectively. The partial substitution of Ge effectively reduced the thermal conductivity to ∼80%, which resulted in the increase in the
ZT
of Cr(Si
1−
x
Ge
x
)
2
samples from 0.16 (
x
= 0) to 0.25 (
x
= 0.015) at 600 K. From the results of first-principles calculation for transport properties, it can be concluded that the origin of the increase in electrical conductivity and the decrease in Seebeck coefficient of Ge-substituted samples is the decrease in carrier effective mass.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNotj11LwzAYhYMoWKe3XucPtObNR9NcljKnY6Dg7kObvsHIZkuSXfjv7Zxw4HDg4cBDyCOwSqtaP2237XulVAUADYMrUoCQupSsVtekYIxDKQ3nt-Qupa9l1kpCQdq19-hyopOnG6TpNKQc8imH6ZsuyZ8YjxMeFiQGR-c4zRhzwD--ix-B8nty4_tDwof_XpH983rfvZS7t81r1-5K10gouW6YHPwgxSi0QsOMc1pq1JqB6dF47RsFfhBcCM-UMUw7bjTI0Y0jQi9WpLrcujilFNHbOYZjH38sMHv2t2d_q5S9-ItfnxBNIQ</recordid><startdate>20161101</startdate><enddate>20161101</enddate><creator>Nagai, Hiroki</creator><creator>Takamatsu, Tomohisa</creator><creator>Iijima, Yoshihiko</creator><creator>Hayashi, Kei</creator><creator>Miyazaki, Yuzuru</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20161101</creationdate><title>Effects of Ge substitution on thermoelectric properties of CrSi 2</title><author>Nagai, Hiroki ; Takamatsu, Tomohisa ; Iijima, Yoshihiko ; Hayashi, Kei ; Miyazaki, Yuzuru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c841-27804bfb43d375e909cc747e77019ae9f7f851fb3233f059907c29714dcdde1a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nagai, Hiroki</creatorcontrib><creatorcontrib>Takamatsu, Tomohisa</creatorcontrib><creatorcontrib>Iijima, Yoshihiko</creatorcontrib><creatorcontrib>Hayashi, Kei</creatorcontrib><creatorcontrib>Miyazaki, Yuzuru</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nagai, Hiroki</au><au>Takamatsu, Tomohisa</au><au>Iijima, Yoshihiko</au><au>Hayashi, Kei</au><au>Miyazaki, Yuzuru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of Ge substitution on thermoelectric properties of CrSi 2</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2016-11-01</date><risdate>2016</risdate><volume>55</volume><issue>11</issue><spage>111801</spage><pages>111801-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Polycrystalline Cr(Si
1−
x
Ge
x
)
2
samples were prepared using arc melting and spark plasma sintering methods. Single-phase Cr(Si
1−
x
Ge
x
)
2
samples were obtained for the compositional range of 0 ≤
x
≤ 0.015 and the lattice parameters monotonically increased with
x
. In the range of single phases, the electrical conductivity and Seebeck coefficient increased and decreased with increasing
x
, respectively. The partial substitution of Ge effectively reduced the thermal conductivity to ∼80%, which resulted in the increase in the
ZT
of Cr(Si
1−
x
Ge
x
)
2
samples from 0.16 (
x
= 0) to 0.25 (
x
= 0.015) at 600 K. From the results of first-principles calculation for transport properties, it can be concluded that the origin of the increase in electrical conductivity and the decrease in Seebeck coefficient of Ge-substituted samples is the decrease in carrier effective mass.</abstract><doi>10.7567/JJAP.55.111801</doi></addata></record> |
| fulltext | fulltext |
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| ispartof | Japanese Journal of Applied Physics, 2016-11, Vol.55 (11), p.111801 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_7567_JJAP_55_111801 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Effects of Ge substitution on thermoelectric properties of CrSi 2 |
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