Heterostructure optimization for increasing LED efficiency
Computer simulations were performed to increase the quantum efficiency of LED by optimizing the nanoheterostructure (NH). Furthermore, the InGaN and AlGaP NHs for LEDs were optimized. On the basis of the optimum NH, ways to further increase the efficiency and the influence of impurities and indium a...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2016-05, Vol.55 (5S), p.5 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Computer simulations were performed to increase the quantum efficiency of LED by optimizing the nanoheterostructure (NH). Furthermore, the InGaN and AlGaP NHs for LEDs were optimized. On the basis of the optimum NH, ways to further increase the efficiency and the influence of impurities and indium atoms doped into barriers between quantum wells were investigated. The optimum impurity and indium atom concentrations to achieve higher flux were determined. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.7567/JJAP.55.05FJ13 |