Determination of the type of stacking faults in single-crystal high-purity diamond with a low dislocation density of <50 cm−2 by synchrotron X-ray topography

Determination of the type of stacking faults in single-crystal high-purity diamond with a low dislocation density of <50 cm−2 by synchrotron X-ray topography

The properties of stacking faults in a single-crystal high-purity diamond with a very low dislocation density of

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Veröffentlicht in:Japanese Journal of Applied Physics 2016-04, Vol.55 (4), p.40303
Hauptverfasser: Masuya, Satoshi, Hanada, Kenji, Uematsu, Takumi, Moribayashi, Tomoya, Sumiya, Hitoshi, Kasu, Makoto
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container_issue 4
container_start_page 40303
container_title Japanese Journal of Applied Physics
container_volume 55
creator Masuya, Satoshi
Hanada, Kenji
Uematsu, Takumi
Moribayashi, Tomoya
Sumiya, Hitoshi
Kasu, Makoto
description The properties of stacking faults in a single-crystal high-purity diamond with a very low dislocation density of
doi_str_mv 10.7567/JJAP.55.040303
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We found stacking faults on the {111} plane and determined the fault vector f of the stacking faults to be on the basis of the f · g extinction criteria. Furthermore, we have found that the partial dislocations are of the Shockley type on the basis of the b · g extinction criteria. Consequently, we concluded that the stacking faults are of the Shockley type and formed because of the decomposition of dislocations with into dislocations with and .</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.55.040303</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><ispartof>Japanese Journal of Applied Physics, 2016-04, Vol.55 (4), p.40303</ispartof><rights>2016 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1193-c631ffec6e63b738665bb6af4174b5a3d2afafb968a9868e16848acfbdb7a4dd3</citedby><cites>FETCH-LOGICAL-c1193-c631ffec6e63b738665bb6af4174b5a3d2afafb968a9868e16848acfbdb7a4dd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.55.040303/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Masuya, Satoshi</creatorcontrib><creatorcontrib>Hanada, Kenji</creatorcontrib><creatorcontrib>Uematsu, Takumi</creatorcontrib><creatorcontrib>Moribayashi, Tomoya</creatorcontrib><creatorcontrib>Sumiya, Hitoshi</creatorcontrib><creatorcontrib>Kasu, Makoto</creatorcontrib><title>Determination of the type of stacking faults in single-crystal high-purity diamond with a low dislocation density of &lt;50 cm−2 by synchrotron X-ray topography</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>The properties of stacking faults in a single-crystal high-purity diamond with a very low dislocation density of &lt;50 cm−2 and a very low impurity concentration of &lt;0.1 ppm were investigated by synchrotron X-ray topography. We found stacking faults on the {111} plane and determined the fault vector f of the stacking faults to be on the basis of the f · g extinction criteria. Furthermore, we have found that the partial dislocations are of the Shockley type on the basis of the b · g extinction criteria. 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J. Appl. Phys</addtitle><date>2016-04-01</date><risdate>2016</risdate><volume>55</volume><issue>4</issue><spage>40303</spage><pages>40303-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>The properties of stacking faults in a single-crystal high-purity diamond with a very low dislocation density of &lt;50 cm−2 and a very low impurity concentration of &lt;0.1 ppm were investigated by synchrotron X-ray topography. We found stacking faults on the {111} plane and determined the fault vector f of the stacking faults to be on the basis of the f · g extinction criteria. Furthermore, we have found that the partial dislocations are of the Shockley type on the basis of the b · g extinction criteria. Consequently, we concluded that the stacking faults are of the Shockley type and formed because of the decomposition of dislocations with into dislocations with and .</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.55.040303</doi><tpages>4</tpages></addata></record>
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title Determination of the type of stacking faults in single-crystal high-purity diamond with a low dislocation density of <50 cm−2 by synchrotron X-ray topography
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