Determination of the type of stacking faults in single-crystal high-purity diamond with a low dislocation density of <50 cm−2 by synchrotron X-ray topography
The properties of stacking faults in a single-crystal high-purity diamond with a very low dislocation density of
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Veröffentlicht in: | Japanese Journal of Applied Physics 2016-04, Vol.55 (4), p.40303 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The properties of stacking faults in a single-crystal high-purity diamond with a very low dislocation density of |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAP.55.040303 |