Suppression of plasma-induced damage on GaN etched by a Cl 2 plasma at high temperatures
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Veröffentlicht in: | Japanese Journal of Applied Physics 2015-06, Vol.54 (6S2), p.6 |
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container_issue | 6S2 |
container_start_page | 6 |
container_title | Japanese Journal of Applied Physics |
container_volume | 54 |
creator | Liu, Zecheng Pan, Jialin Kako, Takashi Ishikawa, Kenji Takeda, Keigo Kondo, Hiroki Oda, Osamu Sekine, Makoto Hori, Masaru |
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doi_str_mv | 10.7567/JJAP.54.06GB04 |
format | Article |
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identifier | ISSN: 0021-4922 |
ispartof | Japanese Journal of Applied Physics, 2015-06, Vol.54 (6S2), p.6 |
issn | 0021-4922 1347-4065 |
language | eng |
recordid | cdi_crossref_primary_10_7567_JJAP_54_06GB04 |
source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
title | Suppression of plasma-induced damage on GaN etched by a Cl 2 plasma at high temperatures |
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