Highly strained channel with low-resistivity carbon-doped source/drain formed by cascade C 7 H x implantation followed by rapid solid-phase epitaxy and laser annealing for n-channel metal–oxide–semiconductor field-effect transistor

Highly strained channel with low-resistivity carbon-doped source/drain formed by cascade C 7 H x implantation followed by rapid solid-phase epitaxy and laser annealing for n-channel metal–oxide–semiconductor field-effect transistor

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Veröffentlicht in:Japanese Journal of Applied Physics 2015-03, Vol.54 (3), p.36503
Hauptverfasser: Yamaguchi, Tadashi, Kawasaki, Yoji, Yamashita, Tomohiro, Nishida, Yukio, Mizuo, Mariko, Maekawa, Kazuyoshi, Fujisawa, Masahiko
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container_title Japanese Journal of Applied Physics
container_volume 54
creator Yamaguchi, Tadashi
Kawasaki, Yoji
Yamashita, Tomohiro
Nishida, Yukio
Mizuo, Mariko
Maekawa, Kazuyoshi
Fujisawa, Masahiko
description
doi_str_mv 10.7567/JJAP.54.036503
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Highly strained channel with low-resistivity carbon-doped source/drain formed by cascade C 7 H x implantation followed by rapid solid-phase epitaxy and laser annealing for n-channel metal–oxide–semiconductor field-effect transistor
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