Strain distribution and Raman spectroscopy in individual Ge/CdSe biaxial nanowires

The interface property modulated by strain is one of the key factors that determine the performance of heterostructure nanowire devices. In this study, the strain distribution in a Ge/CdSe biaxial nanowire was calculated by a finite element method using boundary conditions. The components of the str...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2015-02, Vol.54 (2), p.25001-1-025001-7
Hauptverfasser:	Wang, Dong, Wang, Chunrui, Xu, Jing, Wu, Binhe, Ouyang, Lizhi, Parthasarathy, Ranganathan, Chen, Xiaoshuang
Format:	Artikel
Sprache:	eng
Schlagworte:	Cadmium selenides Germanium Intermetallics Mathematical analysis Nanowires Red shift Strain Strain distribution Tensors
Online-Zugang:	Volltext
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