Strain distribution and Raman spectroscopy in individual Ge/CdSe biaxial nanowires

The interface property modulated by strain is one of the key factors that determine the performance of heterostructure nanowire devices. In this study, the strain distribution in a Ge/CdSe biaxial nanowire was calculated by a finite element method using boundary conditions. The components of the strain tensor of the biaxial nanowire show different characteristics from those of core-shell nanowires. The relationship between the strain and Raman mode of a Ge sub-nanowire is then revealed. The calculated and measured Raman modes of a Ge sub-nanowire in a Ge/CdSe biaxial nanowire have the same variation in redshift and wide peak as those of unstrained Ge nanowires.