Growth of high-indium-content InGaN:Mg thin films by MBE method with dual RF nitrogen plasma cells

Growth of high-indium-content InGaN:Mg thin films by MBE method with dual RF nitrogen plasma cells

Mg-doped high-In-content InxGa1−xN (x ∼ 0.35) thin films were grown on a c-face sapphire substrate using an MBE apparatus having dual RF nitrogen plasma cells. The films showed p-type conduction under certain cell temperatures of Mg. The p-type conduction was confirmed by electrolyte-based capacitan...

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Veröffentlicht in:Japanese Journal of Applied Physics 2014-11, Vol.53 (11S), p.11-1-11RC04-5
Hauptverfasser: Sato, Yuichi, Matsunaga, Tatsuya, Takemoto, Hiroki, Murakami, Yoshifumi, Muraki, Yuhei, Ishizaki, Syota
Format: Artikel
Sprache:eng
Schlagworte:
Electrolytic cells
Force measurement
Indium oxides
Magnesium
Nitrogen plasma
Sapphire
Thin films
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Zusammenfassung:Mg-doped high-In-content InxGa1−xN (x ∼ 0.35) thin films were grown on a c-face sapphire substrate using an MBE apparatus having dual RF nitrogen plasma cells. The films showed p-type conduction under certain cell temperatures of Mg. The p-type conduction was confirmed by electrolyte-based capacitance-voltage measurement on an InxGa1−xN:Mg/In2O3/sapphire structure, in addition to thermo-electromotive force measurements.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.53.11RC04