Characterization of a -plane InGaN light-emitting diodes with a SiN x interlayer grown on a patterned sapphire substrate by metal–organic chemical vapor deposition

Characterization of a -plane InGaN light-emitting diodes with a SiN x interlayer grown on a patterned sapphire substrate by metal–organic chemical vapor deposition

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Veröffentlicht in:Japanese Journal of Applied Physics 2014-11, Vol.53 (11), p.111001
Hauptverfasser: Yoo, Geunho, Min, Daehong, Lee, Kyseung, Jang, Jongjin, Moon, Seunghwan, Chae, Sooryong, Kim, Jaehwan, Nam, Okhyun
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container_title Japanese Journal of Applied Physics
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creator Yoo, Geunho
Min, Daehong
Lee, Kyseung
Jang, Jongjin
Moon, Seunghwan
Chae, Sooryong
Kim, Jaehwan
Nam, Okhyun
description
doi_str_mv 10.7567/JJAP.53.111001
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title Characterization of a -plane InGaN light-emitting diodes with a SiN x interlayer grown on a patterned sapphire substrate by metal–organic chemical vapor deposition
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