Performance improvement of the resistive memory properties of InGaZnO thin films by using microwave irradiation
Microwave irradiation (MWI) at low temperature was employed in resistive random access memory (ReRAM) fabrication with InGaZnO (IGZO) thin-films as a switching medium, and the resistive switching behaviors were compared with conventional thermal annealing (CTA) process. A surface roughness of the MW...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2014-04, Vol.53 (4S), p.4-1-04EJ04-4 |
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Sprache: | eng |
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Zusammenfassung: | Microwave irradiation (MWI) at low temperature was employed in resistive random access memory (ReRAM) fabrication with InGaZnO (IGZO) thin-films as a switching medium, and the resistive switching behaviors were compared with conventional thermal annealing (CTA) process. A surface roughness of the MWI-treated IGZO layer is smoother than that of the CTA-treated layer. An electrical conduction mechanism of the MWI-treated device is similar to that of the pristine device, whereas the CTA device exhibits a different mechanism. After MWI treatment, the current ON/OFF ratio of IGZO ReRAMs significantly increased from 0.49 × 101 to 1.16 × 102, which was ascribed to the reduction in the OFF current. Further, the enlarged ON/OFF resistance window allowed sufficient data retention of >10 years at 85 °C. Owing to its smoother surface for stable resistive switching, low thermal budget, and process simplicity, MWI has great potential for metal-oxide ReRAMs in transparent and flexible system-on-panel applications. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAP.53.04EJ04 |