Influence of substrates on resistive switching behaviors of V-doped SrTiO 3 thin films

V-doped SrTiO 3 (V:STO) thin films on Si and Pt/Ti/SiO 2 /Si substrates are synthesized by sol–gel method to form metal–insulator–metal (MIM) structures. Bipolar resistive switching (RS) characteristics were investigated in Pt/V:STO/Si and Pt/V:STO/Pt structures respectively. The enhancement of resistive switching behavior in Pt/V:STO/Pt/Ti/SiO 2 /Si structures were demonstrated in terms of the maximum operation voltage reduced from 20 to 2 V and the improved R OFF / R ON ratio increased from 10 2 to 10 3 . The electrochemical migration of oxygen vacancies resulted from the metal–oxide interfaces was applied to explain the resistive switching behaviors. On the basis of current–voltage characteristics, the switching mechanisms for the low resistance state (LRS) and high resistance state (HRS) currents of V:STO films are considered as Ohmic and trap-controlled space charge-limited current (SCLC) behavior, respectively.