Bi 4 Ti 3 O 12 Nanowall Growth Driven by Anisotropic Growth Rate and Size Control

Ferroelectric and piezoelectric Bi 4 Ti 3 O 12 was epitaxially grown on TiO 2 (101) with a ( b )-axis orientation by pulsed laser deposition (PLD). Owing to the strong growth anisotropy indigenous to bismuth-layered perovskites including Bi 4 Ti 3 O 12 , it grew rapidly along the a - and b -axes and...

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Veröffentlicht in:Japanese Journal of Applied Physics 2013-09, Vol.52 (9S1), p.9
Hauptverfasser: Yamada, Tomoaki, Shibata, Takaaki, Ishii, Koji, Kimura, Junichi, Funakubo, Hiroshi, Yoshino, Masahito, Nagasaki, Takanori
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Sprache:eng
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Zusammenfassung:Ferroelectric and piezoelectric Bi 4 Ti 3 O 12 was epitaxially grown on TiO 2 (101) with a ( b )-axis orientation by pulsed laser deposition (PLD). Owing to the strong growth anisotropy indigenous to bismuth-layered perovskites including Bi 4 Ti 3 O 12 , it grew rapidly along the a - and b -axes and slowly along the c -axis. Therefore, at low deposition temperatures below 700 °C, Bi 4 Ti 3 O 12 nuclei did not merge with each other along the c -axis during the growth, which resulted in the formation of the nanowall-like structure. It was found that the width of nanowalls decreased with decreasing deposition temperature, which implies that the surface diffusivity of PLD species plays a role in changing the width of nanowalls. It was also found that the interval of nanowalls can be effectively controlled by adjusting the oxygen pressure during the deposition.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.09KA09