Bi 4 Ti 3 O 12 Nanowall Growth Driven by Anisotropic Growth Rate and Size Control
Ferroelectric and piezoelectric Bi 4 Ti 3 O 12 was epitaxially grown on TiO 2 (101) with a ( b )-axis orientation by pulsed laser deposition (PLD). Owing to the strong growth anisotropy indigenous to bismuth-layered perovskites including Bi 4 Ti 3 O 12 , it grew rapidly along the a - and b -axes and...
Gespeichert in:
Veröffentlicht in: | Japanese Journal of Applied Physics 2013-09, Vol.52 (9S1), p.9 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Ferroelectric and piezoelectric Bi
4
Ti
3
O
12
was epitaxially grown on TiO
2
(101) with
a
(
b
)-axis orientation by pulsed laser deposition (PLD). Owing to the strong growth anisotropy indigenous to bismuth-layered perovskites including Bi
4
Ti
3
O
12
, it grew rapidly along the
a
- and
b
-axes and slowly along the
c
-axis. Therefore, at low deposition temperatures below 700 °C, Bi
4
Ti
3
O
12
nuclei did not merge with each other along the
c
-axis during the growth, which resulted in the formation of the nanowall-like structure. It was found that the width of nanowalls decreased with decreasing deposition temperature, which implies that the surface diffusivity of PLD species plays a role in changing the width of nanowalls. It was also found that the interval of nanowalls can be effectively controlled by adjusting the oxygen pressure during the deposition. |
---|---|
ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAP.52.09KA09 |