Fabrication of C-Doped p-AlGaInN Light-Emitting Diodes by the Insertion of Al 4 C 3

A C-doped p-AlGaInN light-emitting diode (LED) fabricated from III–V nitride was grown by metalorganic vapor phase epitaxy (MOVPE) by the insertion of Al 4 C 3 /Al 2 O 3 (0001). Al 4 C 3 /Al 2 O 3 (0001) with a size of 1×1 mm 2 was placed at the center of a 2-in. Al 2 O 3 (0001) substrate before growing the LED. An InGaN/GaN multi quantum well (MQW) was used as an active layer. The concentrations of C and Si were different with the distance of Al 4 C 3 . Maximum C ( p ≧10 18 cm -3 ) and Si ( n ≧10 19 cm -3 ) intensities were observed at the edge and the half of center and edge on the grown wafer, respectively. The voltage of the C-doped AlGaInN LED was 6.9 V at 10 mA. The peak electroluminescence (EL) wavelength and the full-width at half-maximum (FWHM) were 395 nm and about 30 nm, respectively. It was clearly proven that u-Al 0.19 Ga 0.81 N became p-Al 0.19 Ga 0.81 N.