Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions

Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions

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Veröffentlicht in:Japanese Journal of Applied Physics 2012-11, Vol.51 (11S), p.11
Hauptverfasser: Yamamoto, Shuu'ichirou, Shuto, Yusuke, Sugahara, Satoshi
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container_issue 11S
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container_title Japanese Journal of Applied Physics
container_volume 51
creator Yamamoto, Shuu'ichirou
Shuto, Yusuke
Sugahara, Satoshi
description
doi_str_mv 10.7567/JJAP.51.11PB02
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title Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions
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