Improving Mobility of F-Doped SnO 2 Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition

Improving Mobility of F-Doped SnO 2 Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition

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Veröffentlicht in:Japanese Journal of Applied Physics 2012-09, Vol.51 (9R), p.95801
Hauptverfasser: Isshiki, Masanobu, Ikeda, Toru, Okubo, Junichi, Oyama, Takuji, Shidoji, Eiji, Odaka, Hidefumi, Sichanugrist, Porponth, Konagai, Makoto
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container_end_page
container_issue 9R
container_start_page 95801
container_title Japanese Journal of Applied Physics
container_volume 51
creator Isshiki, Masanobu
Ikeda, Toru
Okubo, Junichi
Oyama, Takuji
Shidoji, Eiji
Odaka, Hidefumi
Sichanugrist, Porponth
Konagai, Makoto
description
doi_str_mv 10.7567/JJAP.51.095801
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_7567_JJAP_51_095801</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_7567_JJAP_51_095801</sourcerecordid><originalsourceid>FETCH-crossref_primary_10_7567_JJAP_51_0958013</originalsourceid><addsrcrecordid>eNqVj8tKxDAYRoMoWC9b1_8LpCadpnWWMmN1BsUBi9uQaVMn0lz40yrd-eha9AVcfXwczuIQcsVZWoqivN5ub3ep4ClbihvGj0jCF3lJc1aIY5IwlnGaL7PslJzF-P5zC5HzhHxtbED_YdwbPPm96c0wge-gomsfdAsv7hkyqA_GQWV6G2E_wcYN6NuxmZ1a26BRDSNquEfVGu0GaEec2aP_pDvUMc5wddDWNKqHVxU8wloHH81gvLsgJ53qo77823OSVnf16oE26GNE3cmAxiqcJGdy7pRzpxRc_nYu_i18A2G9W-A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Improving Mobility of F-Doped SnO 2 Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition</title><source>Institute of Physics Journals</source><creator>Isshiki, Masanobu ; Ikeda, Toru ; Okubo, Junichi ; Oyama, Takuji ; Shidoji, Eiji ; Odaka, Hidefumi ; Sichanugrist, Porponth ; Konagai, Makoto</creator><creatorcontrib>Isshiki, Masanobu ; Ikeda, Toru ; Okubo, Junichi ; Oyama, Takuji ; Shidoji, Eiji ; Odaka, Hidefumi ; Sichanugrist, Porponth ; Konagai, Makoto</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.51.095801</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 2012-09, Vol.51 (9R), p.95801</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-crossref_primary_10_7567_JJAP_51_0958013</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Isshiki, Masanobu</creatorcontrib><creatorcontrib>Ikeda, Toru</creatorcontrib><creatorcontrib>Okubo, Junichi</creatorcontrib><creatorcontrib>Oyama, Takuji</creatorcontrib><creatorcontrib>Shidoji, Eiji</creatorcontrib><creatorcontrib>Odaka, Hidefumi</creatorcontrib><creatorcontrib>Sichanugrist, Porponth</creatorcontrib><creatorcontrib>Konagai, Makoto</creatorcontrib><title>Improving Mobility of F-Doped SnO 2 Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqVj8tKxDAYRoMoWC9b1_8LpCadpnWWMmN1BsUBi9uQaVMn0lz40yrd-eha9AVcfXwczuIQcsVZWoqivN5ub3ep4ClbihvGj0jCF3lJc1aIY5IwlnGaL7PslJzF-P5zC5HzhHxtbED_YdwbPPm96c0wge-gomsfdAsv7hkyqA_GQWV6G2E_wcYN6NuxmZ1a26BRDSNquEfVGu0GaEec2aP_pDvUMc5wddDWNKqHVxU8wloHH81gvLsgJ53qo77823OSVnf16oE26GNE3cmAxiqcJGdy7pRzpxRc_nYu_i18A2G9W-A</recordid><startdate>20120901</startdate><enddate>20120901</enddate><creator>Isshiki, Masanobu</creator><creator>Ikeda, Toru</creator><creator>Okubo, Junichi</creator><creator>Oyama, Takuji</creator><creator>Shidoji, Eiji</creator><creator>Odaka, Hidefumi</creator><creator>Sichanugrist, Porponth</creator><creator>Konagai, Makoto</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120901</creationdate><title>Improving Mobility of F-Doped SnO 2 Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition</title><author>Isshiki, Masanobu ; Ikeda, Toru ; Okubo, Junichi ; Oyama, Takuji ; Shidoji, Eiji ; Odaka, Hidefumi ; Sichanugrist, Porponth ; Konagai, Makoto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-crossref_primary_10_7567_JJAP_51_0958013</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Isshiki, Masanobu</creatorcontrib><creatorcontrib>Ikeda, Toru</creatorcontrib><creatorcontrib>Okubo, Junichi</creatorcontrib><creatorcontrib>Oyama, Takuji</creatorcontrib><creatorcontrib>Shidoji, Eiji</creatorcontrib><creatorcontrib>Odaka, Hidefumi</creatorcontrib><creatorcontrib>Sichanugrist, Porponth</creatorcontrib><creatorcontrib>Konagai, Makoto</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Isshiki, Masanobu</au><au>Ikeda, Toru</au><au>Okubo, Junichi</au><au>Oyama, Takuji</au><au>Shidoji, Eiji</au><au>Odaka, Hidefumi</au><au>Sichanugrist, Porponth</au><au>Konagai, Makoto</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improving Mobility of F-Doped SnO 2 Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2012-09-01</date><risdate>2012</risdate><volume>51</volume><issue>9R</issue><spage>95801</spage><pages>95801-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.7567/JJAP.51.095801</doi></addata></record>
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1347-4065
language eng
recordid cdi_crossref_primary_10_7567_JJAP_51_095801
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title Improving Mobility of F-Doped SnO 2 Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T15%3A35%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improving%20Mobility%20of%20F-Doped%20SnO%202%20Thin%20Films%20by%20Introducing%20Temperature%20Gradient%20during%20Low-Pressure%20Chemical%20Vapor%20Deposition&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Isshiki,%20Masanobu&rft.date=2012-09-01&rft.volume=51&rft.issue=9R&rft.spage=95801&rft.pages=95801-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.7567/JJAP.51.095801&rft_dat=%3Ccrossref%3E10_7567_JJAP_51_095801%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true