Experimental Study of Floating-Gate-Type Metal–Oxide–Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application

Experimental Study of Floating-Gate-Type Metal–Oxide–Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application

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Veröffentlicht in:Japanese Journal of Applied Physics 2012-06, Vol.51 (6S), p.6
Hauptverfasser: Liu, Yongxun, Guo, Ruofeng, Kamei, Takahiro, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Hayashida, Tetsuro, Sakamoto, Kunihiro, Ogura, Atsushi, Masahara, Meishoku
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container_issue 6S
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container_title Japanese Journal of Applied Physics
container_volume 51
creator Liu, Yongxun
Guo, Ruofeng
Kamei, Takahiro
Matsukawa, Takashi
Endo, Kazuhiko
O'uchi, Shinichi
Tsukada, Junichi
Yamauchi, Hiromi
Ishikawa, Yuki
Hayashida, Tetsuro
Sakamoto, Kunihiro
Ogura, Atsushi
Masahara, Meishoku
description
doi_str_mv 10.7567/JJAP.51.06FF01
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title Experimental Study of Floating-Gate-Type Metal–Oxide–Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application
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