Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory

Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory

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Veröffentlicht in:Japanese Journal of Applied Physics 2012-02, Vol.51 (2S), p.2
Hauptverfasser: Matsunaga, Shoun, Katsumata, Akira, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro
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container_end_page
container_issue 2S
container_start_page 2
container_title Japanese Journal of Applied Physics
container_volume 51
creator Matsunaga, Shoun
Katsumata, Akira
Natsui, Masanori
Endoh, Tetsuo
Ohno, Hideo
Hanyu, Takahiro
description
doi_str_mv 10.7567/JJAP.51.02BM06
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory
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