The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy

The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy

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Veröffentlicht in:Japanese Journal of Applied Physics 2011-09, Vol.50 (9R), p.95801
Hauptverfasser: Lee, Sunhwa, Park, Seungman, Park, Jinjoo, Kim, Youngkuk, Yoon, Kichan, Shin, Chonghoon, Baek, Seungsin, Kim, Joondong, Lee, Youn-Jung, Yi, Junsin
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container_end_page
container_issue 9R
container_start_page 95801
container_title Japanese Journal of Applied Physics
container_volume 50
creator Lee, Sunhwa
Park, Seungman
Park, Jinjoo
Kim, Youngkuk
Yoon, Kichan
Shin, Chonghoon
Baek, Seungsin
Kim, Joondong
Lee, Youn-Jung
Yi, Junsin
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doi_str_mv 10.7567/JJAP.50.095801
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_7567_JJAP_50_095801</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_7567_JJAP_50_095801</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1506-b7c6e4025374ccc5abfc189ff38a90d10c03b6e7ad0528f53fbe560366f48d463</originalsourceid><addsrcrecordid>eNotkM1OwzAQhC0EEqVw5ewXSFjHP0mOpRRoVYlKLRK3yHFs6qqtIztF5A14bBzKaWdXs99Ig9A9gTTnIn9YLCarlEMKJS-AXKARoSxPGAh-iUYAGUlYmWXX6CaEXVwFZ2SEfjZbjWfGaNVhZ_BUem-1x_PjLl6sO-J153UIOKpH590xeXKtbvDk4Hy7daeA13Zv1eA71e7bNhovZa99iIQvHTr7Kbtor3v8kXjZ49XWdU7vI9sPP-2fCMq1_S26MnIf9N3_HKP359lm-pos317m08kyUYSDSOpcCc0g4zRnSikua6NIURpDC1lCQ0ABrYXOZQM8KwynptZcABXCsKJhgo5ReuaqGBy8NlXr7UH6viJQDT1WQ48Vh-rcI_0FcvpodA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Lee, Sunhwa ; Park, Seungman ; Park, Jinjoo ; Kim, Youngkuk ; Yoon, Kichan ; Shin, Chonghoon ; Baek, Seungsin ; Kim, Joondong ; Lee, Youn-Jung ; Yi, Junsin</creator><creatorcontrib>Lee, Sunhwa ; Park, Seungman ; Park, Jinjoo ; Kim, Youngkuk ; Yoon, Kichan ; Shin, Chonghoon ; Baek, Seungsin ; Kim, Joondong ; Lee, Youn-Jung ; Yi, Junsin</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.50.095801</identifier><language>eng ; jpn</language><ispartof>Japanese Journal of Applied Physics, 2011-09, Vol.50 (9R), p.95801</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1506-b7c6e4025374ccc5abfc189ff38a90d10c03b6e7ad0528f53fbe560366f48d463</citedby><cites>FETCH-LOGICAL-c1506-b7c6e4025374ccc5abfc189ff38a90d10c03b6e7ad0528f53fbe560366f48d463</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Lee, Sunhwa</creatorcontrib><creatorcontrib>Park, Seungman</creatorcontrib><creatorcontrib>Park, Jinjoo</creatorcontrib><creatorcontrib>Kim, Youngkuk</creatorcontrib><creatorcontrib>Yoon, Kichan</creatorcontrib><creatorcontrib>Shin, Chonghoon</creatorcontrib><creatorcontrib>Baek, Seungsin</creatorcontrib><creatorcontrib>Kim, Joondong</creatorcontrib><creatorcontrib>Lee, Youn-Jung</creatorcontrib><creatorcontrib>Yi, Junsin</creatorcontrib><title>The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNotkM1OwzAQhC0EEqVw5ewXSFjHP0mOpRRoVYlKLRK3yHFs6qqtIztF5A14bBzKaWdXs99Ig9A9gTTnIn9YLCarlEMKJS-AXKARoSxPGAh-iUYAGUlYmWXX6CaEXVwFZ2SEfjZbjWfGaNVhZ_BUem-1x_PjLl6sO-J153UIOKpH590xeXKtbvDk4Hy7daeA13Zv1eA71e7bNhovZa99iIQvHTr7Kbtor3v8kXjZ49XWdU7vI9sPP-2fCMq1_S26MnIf9N3_HKP359lm-pos317m08kyUYSDSOpcCc0g4zRnSikua6NIURpDC1lCQ0ABrYXOZQM8KwynptZcABXCsKJhgo5ReuaqGBy8NlXr7UH6viJQDT1WQ48Vh-rcI_0FcvpodA</recordid><startdate>20110901</startdate><enddate>20110901</enddate><creator>Lee, Sunhwa</creator><creator>Park, Seungman</creator><creator>Park, Jinjoo</creator><creator>Kim, Youngkuk</creator><creator>Yoon, Kichan</creator><creator>Shin, Chonghoon</creator><creator>Baek, Seungsin</creator><creator>Kim, Joondong</creator><creator>Lee, Youn-Jung</creator><creator>Yi, Junsin</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110901</creationdate><title>The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy</title><author>Lee, Sunhwa ; Park, Seungman ; Park, Jinjoo ; Kim, Youngkuk ; Yoon, Kichan ; Shin, Chonghoon ; Baek, Seungsin ; Kim, Joondong ; Lee, Youn-Jung ; Yi, Junsin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1506-b7c6e4025374ccc5abfc189ff38a90d10c03b6e7ad0528f53fbe560366f48d463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; jpn</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Sunhwa</creatorcontrib><creatorcontrib>Park, Seungman</creatorcontrib><creatorcontrib>Park, Jinjoo</creatorcontrib><creatorcontrib>Kim, Youngkuk</creatorcontrib><creatorcontrib>Yoon, Kichan</creatorcontrib><creatorcontrib>Shin, Chonghoon</creatorcontrib><creatorcontrib>Baek, Seungsin</creatorcontrib><creatorcontrib>Kim, Joondong</creatorcontrib><creatorcontrib>Lee, Youn-Jung</creatorcontrib><creatorcontrib>Yi, Junsin</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Sunhwa</au><au>Park, Seungman</au><au>Park, Jinjoo</au><au>Kim, Youngkuk</au><au>Yoon, Kichan</au><au>Shin, Chonghoon</au><au>Baek, Seungsin</au><au>Kim, Joondong</au><au>Lee, Youn-Jung</au><au>Yi, Junsin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2011-09-01</date><risdate>2011</risdate><volume>50</volume><issue>9R</issue><spage>95801</spage><pages>95801-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.7567/JJAP.50.095801</doi></addata></record>
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title The Effect of Carrier Injection Stress on Boron-Doped Amorphous Silicon Suboxide Layers Investigated by X-ray Photoelectron Spectroscopy
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T21%3A54%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20Effect%20of%20Carrier%20Injection%20Stress%20on%20Boron-Doped%20Amorphous%20Silicon%20Suboxide%20Layers%20Investigated%20by%20X-ray%20Photoelectron%20Spectroscopy&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Lee,%20Sunhwa&rft.date=2011-09-01&rft.volume=50&rft.issue=9R&rft.spage=95801&rft.pages=95801-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.7567/JJAP.50.095801&rft_dat=%3Ccrossref%3E10_7567_JJAP_50_095801%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true