Patterning of 25 nm Contact Holes at 90 nm Pitch: Combination of Line/Space Double Exposure Immersion Lithography and Plasma-Assisted Shrink Technology

Patterning of 25 nm Contact Holes at 90 nm Pitch: Combination of Line/Space Double Exposure Immersion Lithography and Plasma-Assisted Shrink Technology

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2011-08, Vol.50 (8S1), p.8
Hauptverfasser: Marneffe, Jean-François de, Lazzarino, Frédéric, Goossens, Danny, Vandervorst, Alain, Richard, Olivier, Shamiryan, Denis, Xu, Kaidong, Truffert, Vincent, Boullart, Werner
Format: Artikel
Sprache:eng ; jpn
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 8S1
container_start_page 8
container_title Japanese Journal of Applied Physics
container_volume 50
creator Marneffe, Jean-François de
Lazzarino, Frédéric
Goossens, Danny
Vandervorst, Alain
Richard, Olivier
Shamiryan, Denis
Xu, Kaidong
Truffert, Vincent
Boullart, Werner
description
doi_str_mv 10.7567/JJAP.50.08JE07
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_7567_JJAP_50_08JE07</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_7567_JJAP_50_08JE07</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1500-88794d6db01092c978be202e905aec8a1ce492d7e875f3d5fc45cccd121b0f8b3</originalsourceid><addsrcrecordid>eNotkFFPgzAUhRujiXP66nP_AOwWKAXfljndFhJJNp9JKWVUoSVtl7hf4t91ZD7d3HvOPcn5EHomEDKassVutyxDCiFkuzWwGzQjccKCBFJ6i2YAEQmSPIru0YNzX5c1pQmZod-Sey-tVvqITYsjivWAV0Z7LjzemF46zD3OYTqXyovu5aIOtdLcK6Onl0JpudiPXEj8ak51L_H6ZzTuZCXeDoO0bvIVynfmaPnYnTHXDS577gYeLJ1TzssG7zur9Dc-SNFp05vj-RHdtbx38ul_ztHn2_qw2gTFx_t2tSwCQShAkGUsT5q0qYFAHomcZbWMIJI5UC5FxomQl9INkxmjbdzQViRUCNGQiNTQZnU8R-E1V1jjnJVtNVo1cHuuCFQT1mrCWlGorljjPwn6bMA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Patterning of 25 nm Contact Holes at 90 nm Pitch: Combination of Line/Space Double Exposure Immersion Lithography and Plasma-Assisted Shrink Technology</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Marneffe, Jean-François de ; Lazzarino, Frédéric ; Goossens, Danny ; Vandervorst, Alain ; Richard, Olivier ; Shamiryan, Denis ; Xu, Kaidong ; Truffert, Vincent ; Boullart, Werner</creator><creatorcontrib>Marneffe, Jean-François de ; Lazzarino, Frédéric ; Goossens, Danny ; Vandervorst, Alain ; Richard, Olivier ; Shamiryan, Denis ; Xu, Kaidong ; Truffert, Vincent ; Boullart, Werner</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.50.08JE07</identifier><language>eng ; jpn</language><ispartof>Japanese Journal of Applied Physics, 2011-08, Vol.50 (8S1), p.8</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1500-88794d6db01092c978be202e905aec8a1ce492d7e875f3d5fc45cccd121b0f8b3</citedby><cites>FETCH-LOGICAL-c1500-88794d6db01092c978be202e905aec8a1ce492d7e875f3d5fc45cccd121b0f8b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27907,27908</link.rule.ids></links><search><creatorcontrib>Marneffe, Jean-François de</creatorcontrib><creatorcontrib>Lazzarino, Frédéric</creatorcontrib><creatorcontrib>Goossens, Danny</creatorcontrib><creatorcontrib>Vandervorst, Alain</creatorcontrib><creatorcontrib>Richard, Olivier</creatorcontrib><creatorcontrib>Shamiryan, Denis</creatorcontrib><creatorcontrib>Xu, Kaidong</creatorcontrib><creatorcontrib>Truffert, Vincent</creatorcontrib><creatorcontrib>Boullart, Werner</creatorcontrib><title>Patterning of 25 nm Contact Holes at 90 nm Pitch: Combination of Line/Space Double Exposure Immersion Lithography and Plasma-Assisted Shrink Technology</title><title>Japanese Journal of Applied Physics</title><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNotkFFPgzAUhRujiXP66nP_AOwWKAXfljndFhJJNp9JKWVUoSVtl7hf4t91ZD7d3HvOPcn5EHomEDKassVutyxDCiFkuzWwGzQjccKCBFJ6i2YAEQmSPIru0YNzX5c1pQmZod-Sey-tVvqITYsjivWAV0Z7LjzemF46zD3OYTqXyovu5aIOtdLcK6Onl0JpudiPXEj8ak51L_H6ZzTuZCXeDoO0bvIVynfmaPnYnTHXDS577gYeLJ1TzssG7zur9Dc-SNFp05vj-RHdtbx38ul_ztHn2_qw2gTFx_t2tSwCQShAkGUsT5q0qYFAHomcZbWMIJI5UC5FxomQl9INkxmjbdzQViRUCNGQiNTQZnU8R-E1V1jjnJVtNVo1cHuuCFQT1mrCWlGorljjPwn6bMA</recordid><startdate>20110801</startdate><enddate>20110801</enddate><creator>Marneffe, Jean-François de</creator><creator>Lazzarino, Frédéric</creator><creator>Goossens, Danny</creator><creator>Vandervorst, Alain</creator><creator>Richard, Olivier</creator><creator>Shamiryan, Denis</creator><creator>Xu, Kaidong</creator><creator>Truffert, Vincent</creator><creator>Boullart, Werner</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20110801</creationdate><title>Patterning of 25 nm Contact Holes at 90 nm Pitch: Combination of Line/Space Double Exposure Immersion Lithography and Plasma-Assisted Shrink Technology</title><author>Marneffe, Jean-François de ; Lazzarino, Frédéric ; Goossens, Danny ; Vandervorst, Alain ; Richard, Olivier ; Shamiryan, Denis ; Xu, Kaidong ; Truffert, Vincent ; Boullart, Werner</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1500-88794d6db01092c978be202e905aec8a1ce492d7e875f3d5fc45cccd121b0f8b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; jpn</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Marneffe, Jean-François de</creatorcontrib><creatorcontrib>Lazzarino, Frédéric</creatorcontrib><creatorcontrib>Goossens, Danny</creatorcontrib><creatorcontrib>Vandervorst, Alain</creatorcontrib><creatorcontrib>Richard, Olivier</creatorcontrib><creatorcontrib>Shamiryan, Denis</creatorcontrib><creatorcontrib>Xu, Kaidong</creatorcontrib><creatorcontrib>Truffert, Vincent</creatorcontrib><creatorcontrib>Boullart, Werner</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Marneffe, Jean-François de</au><au>Lazzarino, Frédéric</au><au>Goossens, Danny</au><au>Vandervorst, Alain</au><au>Richard, Olivier</au><au>Shamiryan, Denis</au><au>Xu, Kaidong</au><au>Truffert, Vincent</au><au>Boullart, Werner</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Patterning of 25 nm Contact Holes at 90 nm Pitch: Combination of Line/Space Double Exposure Immersion Lithography and Plasma-Assisted Shrink Technology</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2011-08-01</date><risdate>2011</risdate><volume>50</volume><issue>8S1</issue><spage>8</spage><pages>8-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><doi>10.7567/JJAP.50.08JE07</doi></addata></record>
fulltext fulltext
identifier ISSN: 0021-4922
ispartof Japanese Journal of Applied Physics, 2011-08, Vol.50 (8S1), p.8
issn 0021-4922
1347-4065
language eng ; jpn
recordid cdi_crossref_primary_10_7567_JJAP_50_08JE07
source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Patterning of 25 nm Contact Holes at 90 nm Pitch: Combination of Line/Space Double Exposure Immersion Lithography and Plasma-Assisted Shrink Technology
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T08%3A29%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Patterning%20of%2025%20nm%20Contact%20Holes%20at%2090%20nm%20Pitch:%20Combination%20of%20Line/Space%20Double%20Exposure%20Immersion%20Lithography%20and%20Plasma-Assisted%20Shrink%20Technology&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Marneffe,%20Jean-Fran%C3%A7ois%20de&rft.date=2011-08-01&rft.volume=50&rft.issue=8S1&rft.spage=8&rft.pages=8-&rft.issn=0021-4922&rft.eissn=1347-4065&rft_id=info:doi/10.7567/JJAP.50.08JE07&rft_dat=%3Ccrossref%3E10_7567_JJAP_50_08JE07%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true