Microstructural Characterization in Reliability Measurement of Phase Change Random Access Memory

Microstructural Characterization in Reliability Measurement of Phase Change Random Access Memory

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Veröffentlicht in:Japanese Journal of Applied Physics 2011-04, Vol.50 (4S), p.4
Hauptverfasser: Bae, Junsoo, Hwang, Kyuman, Park, Kwangho, Jeon, Seongbu, Kang, Dae-hwan, Park, Soonoh, Ahn, Juhyeon, Kim, Seoksik, Jeong, Gitae, Chung, Chilhee
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container_end_page
container_issue 4S
container_start_page 4
container_title Japanese Journal of Applied Physics
container_volume 50
creator Bae, Junsoo
Hwang, Kyuman
Park, Kwangho
Jeon, Seongbu
Kang, Dae-hwan
Park, Soonoh
Ahn, Juhyeon
Kim, Seoksik
Jeong, Gitae
Chung, Chilhee
description
doi_str_mv 10.7567/JJAP.50.04DD12
format Article
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Microstructural Characterization in Reliability Measurement of Phase Change Random Access Memory
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