Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell

Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell

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Veröffentlicht in:Japanese Journal of Applied Physics 2011-04, Vol.50 (4S), p.4
Hauptverfasser: Muraguchi, Masakazu, Sakurai, Yoko, Takada, Yukihiro, Shigeta, Yasuteru, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi, Nomura, Shintaro, Shiraishi, Kenji, Endoh, Tetsuo
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container_issue 4S
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container_title Japanese Journal of Applied Physics
container_volume 50
creator Muraguchi, Masakazu
Sakurai, Yoko
Takada, Yukihiro
Shigeta, Yasuteru
Ikeda, Mitsuhisa
Makihara, Katsunori
Miyazaki, Seiichi
Nomura, Shintaro
Shiraishi, Kenji
Endoh, Tetsuo
description
doi_str_mv 10.7567/JJAP.50.04DD04
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title Collective Tunneling Model in Charge-Trap-Type Nonvolatile Memory Cell
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