Optical Second Harmonic Generation as a Method for Characterization of the Semiconductor Surfaces

The phase transition in CdIn 2 S 4 as well as the symmetry properties of GaAs and InP arbitrary oriented surfaces were investigated by second harmonic generation (SHG) method. The isostructural first order phase transition in CdIn 2 S 4 single crystals at T ∼400 K was identified. It was shown the crystallographic orientation of III–V semiconductor surfaces leads to a very pronounced effect on the anisotropy and intensity of the SHG from these surfaces.