Photopleochroism of GaP x As 1-x Surface-Barrier Structures

The proposed work reported here constitutes the first investigation of the polarimetric effects in III-V surface-barrier structures of metal-semiconductor (Au-n-GaP x AS 1- x , Au-n-GaP) type, illuminated with linearly polarized radiation (LPR) at oblique incidence on the entrance plane (Au). As the angle θ increases the coefficient of photopleochroism increases as P ∼θ 2 . The maximum azimutal photosensitivity of the Au-n-GaP x As 1- x ( x =0.45–1.0) structures is \varPhi I =0.15–0.20 A/W deg at θ=80° (300 K).