Relation between the Local Structure and the Desactivation of As + Heavily Implanted Silicon

Relation between the Local Structure and the Desactivation of As + Heavily Implanted Silicon

Monocrystalline silicon wafers were implanted with As ions and the As atomic environment was sounded by Total Electron Yield EXAFS and fluorescence EXAFS. It is shown that the As atoms form inactive vacancy complexes at low temperature and precipitates at high temperature. The structure of these com...

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Veröffentlicht in:Japanese Journal of Applied Physics 1993-01, Vol.32 (S2), p.625
Hauptverfasser: Allain, J. L., Regnard, J. R., Bourret, A., Tourillon, G., Pizzini, S., Parisini, A., Armigliato, A.
Format: Artikel
Sprache:eng
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Zusammenfassung:Monocrystalline silicon wafers were implanted with As ions and the As atomic environment was sounded by Total Electron Yield EXAFS and fluorescence EXAFS. It is shown that the As atoms form inactive vacancy complexes at low temperature and precipitates at high temperature. The structure of these complexes and precipitates are also discussed.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAPS.32S2.625