SAW Resonators Using Epitaxially Grown Al Electrodes

SAW Resonators Using Epitaxially Grown Al Electrodes

Epitaxially grown Al electrode was obtained on rotated Y cut quartz substrate by vapor deposition. The epitaxial relationship was (311)Al//(032) SiO 2 . This electrode had very high resistance to stress migration. In SAW resonators, time to failure caused by stress migration was improved by more tha...

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Veröffentlicht in:Japanese Journal of Applied Physics 1991-01, Vol.30 (S1), p.176
Hauptverfasser: Ieki, Hideharu, Tada, Yutaka, Sakurai, Atsushi, Kimura, Koji
Format: Artikel
Sprache:eng
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Zusammenfassung:Epitaxially grown Al electrode was obtained on rotated Y cut quartz substrate by vapor deposition. The epitaxial relationship was (311)Al//(032) SiO 2 . This electrode had very high resistance to stress migration. In SAW resonators, time to failure caused by stress migration was improved by more than 2000 times and power handling capability was increased by at least 10 times over an ordinary polycrystalline Al–Cu electrode. Epitaxially grown Al electrode was also obtained on LST-cut quartz substrate.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAPS.30S1.176