Imaging of a Diffused Region in a Si Tr-Chip by Electron-Acoustic Microscopy (EAM)

We have carried out comparative in situ studies of various SEM and electron-acoustic microscopy (EAM) images of the same area of Si Tr-chips. By angle lapping, an area of a diffused region of the Si Tr-chip could be observed in situ by both microscopic forms; the polished area was identified by EPMA to consist of a single component material (Si) and hence was regarded to be an area free from thermal property difference. A diffused layer observed by EAM was analogous to an area of thermal properties difference. The contrast of the EAM image changed under bias voltage application.